供应ISC优质三极管BU508

DESCRIPTION                                              
?Collector-Emitter Sustaining Voltage-
  : VCEO(SUS)= 700V (Min)
?High Power Dissipation-
  : PD= 125W@TC= 25℃
  
APPLICATIONS
?Designed for use in large screen color deflection circuits.
  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) 
SYMBOL	PARAMETER	VALUE	UNIT
VCES	Collector- Emitter Voltage(VBE= 0)                         	1500	V
VCEO 	Collector-Emitter Voltage                          	700	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current- Continuous 	8	A
ICM	Collector Current-Peak 	15	A
IB	Base Current- Continuous	4	A
IBM	Base Current-Peak	6	A
PC	Collector Power Dissipation
@ TC=25℃	125	W
TJ	Junction Temperature 	150	℃
Tstg	Storage Temperature Range	-65~150	℃

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance,Junction to Case	1.0	℃/W

 
isc Silicon NPN Power Transistor                  BU508

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
VCEO(SUS) 	Collector-Emitter Sustaining Voltage	IC= 100mA ; IB= 0	700			V
VCE(sat)	Collector-Emitter Saturation Voltage	IC= 4.5A; IB= 2.0A			5.0	V
VBE(sat)	Base-Emitter Saturation Voltage	IC= 4.5A; IB= 2.0A			1.5	V
ICES	Collector Cutoff Current	VCE= 1500V ; VBE= 0
VCE= 1500V ; VBE= 0; TC=125℃			0.1
2.0	mA
IEBO	Emitter Cutoff Current	VEB= 5.0V ; IC= 0			10	mA
hFE-1	DC Current Gain	IC= 0.1A ; VCE= 5V	6		30	
hFE-2	DC Current Gain	IC= 4.5A ; VCE= 5V	2.25			
COB	Output Capacitance	IE= 0; VCB= 10V; ftest= 0.1MHz		125		pF
fT	Current-Gain—Bandwidth Product	IC= 0.1A; VCE= 5V; ftest= 1.0MHz		7		MHz
Switching times
tstg	Storage Time 	IC= 4.5A , IB1= 1.8A; LB= 10μH		8.0		μs
tf	Fall Time			0.5		μs